Atomically Thin Diode
소속 :
연사 : Prof. Philip kim(Columbia University)
일시 : 2013-12-20 15:00 ~
장소 : 500동 목암홀
일 시 : 2013년 12월 20일, 오후 3시
장 소 : 500동 목암홀
-Abstract-
Semiconductor interfaces, where the spatial gradient in built-in potentials governs the electronic and optoelectronic processes, are an essential building block for modern semiconductor devices. Recent advance of atomically thin van der Waals (vdW) materials and their heterostructures provide a new opportunity to realize atomically sharp interfaces in the ultimate quantum limit. In this presentation, we will discuss construction and characterization of an atomically thin vertical Schottky junction and p-n heterojunction based on the vdW assembly of transition metal dichalcogenides and graphen. Unlike conventional p-n junctions, charge transport and photovoltaic response of the devices are found to critically depend on the interlayer recombination process between majority carriers mediated by tunneling across the interface. We demonstrate the enhanced optoelectronic performances in the vdW heterostructures, suggesting that these a few atom thick interfaces may provide a fundamental platform to realize efficient, fast and tunable bipolar electronics, photovoltaics, and optoelectronics.
장 소 : 500동 목암홀
-Abstract-
Semiconductor interfaces, where the spatial gradient in built-in potentials governs the electronic and optoelectronic processes, are an essential building block for modern semiconductor devices. Recent advance of atomically thin van der Waals (vdW) materials and their heterostructures provide a new opportunity to realize atomically sharp interfaces in the ultimate quantum limit. In this presentation, we will discuss construction and characterization of an atomically thin vertical Schottky junction and p-n heterojunction based on the vdW assembly of transition metal dichalcogenides and graphen. Unlike conventional p-n junctions, charge transport and photovoltaic response of the devices are found to critically depend on the interlayer recombination process between majority carriers mediated by tunneling across the interface. We demonstrate the enhanced optoelectronic performances in the vdW heterostructures, suggesting that these a few atom thick interfaces may provide a fundamental platform to realize efficient, fast and tunable bipolar electronics, photovoltaics, and optoelectronics.
